Design ManualΒΆ
- 1.0 Purpose
- 2.0 Scope
- 3.0 Layout Information
- 4.0 Topological Level Definitions
- 5.0 DFM (Design For Manufacturability) Guidelines
- 6.0 Essential Tapeout Checklist
- 7.0 Layout Rule Description
- 8.0 Antenna Ratio Rules
- 9.0 Bond Pad
- 10.0 Analog Device Related Rules
- 10.1 P+ Poly Resistor (PRES)
- 10.2 N+ Poly Resistor (Low SHEET RHO)
- 10.3 HRES Poly Resistor (PHRES) (Optional with one additional mask)
- 10.4 MIM (Metal-insulator-Metal) Capacitor (Optional)
- 10.5 Native Vt NMOS (Optional)
- 10.6 Match pair layout guidelines
- 10.7 DRC_BJT Mark Layer
- 10.8 Design Rules for Dummy Exclude layers (NDMY and PMNDMY)
- 10.9 LVS_BJT Mark Layer
- 10.10 OTP_MK Mark Layer
- 10.11 0.18um MCU eFuse Design Rules
- 10.12 High Voltage LDMOS and related rules
- 10.13 YMTP_MK Mark Layer Rules
- 10.14 Schottky Diode
- 10.15 NEO_EE_MK Layer
- 11.0 SRAM Core Cells
- 12.0 Scribe Line & Guard Ring Rules And Guidelines
- 13.0 Dummy Fill Rules And Guidelines
- 14.0 Reliability Related Rules And Guidelines
- 14.1 Chip Operating Conditions
- 14.2 Electro-migration
- 14.3 Latch-up Rules and Guidelines
- 14.4 ESD Layout Guidelines
- 14.5 ESD Characterization Data
- 14.5.1 ESD Performance from 3.3V NMOS transistor
- 14.5.2 ESD Performance from 3.3V LV N+/PWELL diode
- 14.5.3 ESD Performance from 3.3V LV P+/NWELL diode
- 14.5.4. ESD Performance from 3.3V LV NWELL/PSUB diode
- 14.5.5 ESD Performance from 5V/6V NMOS transistor
- 14.5.6 ESD Performance from 5V/6V PMOS transistor
- 14.5.7 ESD Performance from 5V/6V HV N+/PWELL diode
- 14.5.8 ESD Performance from 5V/6V HV P+/NWELL diode
- 14.6 Stress Relief Guidelines
- Appendix A: Device List for Model and LVS Deck
- Appendix B: Rules not coded