14.5.1 ESD Performance from 3.3V NMOS transistorΒΆ
ESD Performance from 3.3V NMOS transistor is summarized in following table. The TLP data for 3.3V grounded gate NMOS without ESD implant is showed in below.
ESD Parameter |
Parameter Value (without ESD implant) |
Avalanche Breakdown Voltage (Vt1) |
~8.2V TLP Current (A) |
Snapback Holding voltage (Vsp) |
~4.4V |
Second Breakdown Current (It2) |
~9.25mA/um |
Second Breakdown Voltage (Vt2) |
~6.79V |
