14.5.6 ESD Performance from 5V/6V PMOS transistorΒΆ
ESD Performance from 5V/6V PMOS transistor is summarized in following table. The TLP data for 5V/6V grounded gate PMOS without ESD implant is showed in below.
ESD Parameter |
Parameter Value (without ESD implant) |
Avalanche Breakdown Voltage (Vt1) |
~9.7V |
Second Breakdown Current (It2) |
~5.3mA/um |
Second Breakdown Voltage (Vt2) |
~14.1V |
