14.4.3 Design Guidelines for 5V/6V HV SAB NMOS Device¶
When using HV NMOSFET for ESD protection devices, it shall be marked by ESD_MK mark layer. The following layout guidelines are recommended.
RULE NO. |
DESCRIPTION |
RULE |
HVNESD.1 |
HV NMOSFET used for ESD protection should be enclosured by ESD_MK, ESD_MK must enclose well pick-up implant |
0 |
HVNESD.2* |
Poly Channel-length for each finger in multi-finger transistors must be same |
|
G_HVNESD.3 |
Min. channel length for each finger (Recommended) |
0.8 |
G.HVNESD.4 (a)** |
Recommended finger width for each finger |
25 |
HVNESD.4 (b) |
Min. finger width for each finger |
20 |
HVNESD.4 (c) |
Max. finger width for each finger |
60 |
G.HVNESD.5(a)** |
Recommended number of fingers share one pick-up ring in multi-finger transistors. |
12 |
HVNESD.5 (b) |
Max. number of fingers share one pick-up ring in multi- finger transistors |
18 |
G.HVNESD.6 (a)** |
Recommended total finger width |
300 |
HVNESD.6(b) |
Min. total finger width |
200 |
HVNESD.6(c) |
Max. total finger width |
720 |
HVNESD.7 |
SAB should cover drain and source and overlap gate or cover drain only with rule HVNESD.7(a) partly overlap poly Gate |
|
HVNESD.7(a) |
Min/max SAB overlap Poly gate |
0.05 |
G.HVNESD.8 (a)** |
Recommended at least one or nearest drain contact to gate edge space (DCGS) |
4 |
HVNESD.8 (b) |
Min. drain contact to gate edge space (DCGS) |
1 |
HVNESD.8 (c) |
Max. at least one or nearest drain contact to gate edge space (DCGS) |
4 |
G_HVNESD.10 |
Recommended well tap COMP to active COMP space in channel length direction. |
1.5 |
HVNESD.11 |
Source COMP must enclose by LVS_Source |
0 |
HVNESD.12 |
LVS_Source must butt to Poly edge |
0 |
G.HVNESD.13** |
Recommended at least one or nearest source contact to gate edge space (SCGS) when SAB cover drain-source over poly gate |
0.5 |
HVNESD.13 (a) |
Min. source contact to gate edge space (SCGS) when SAB cover drain-source over poly gate |
0.15 |
HVNESD.13(b) |
Max. at least one or nearest source contact to gate edge space (SCGS) when SAB cover drain-source over poly gate |
1 |
COHVNESD.7 |
Recommended/max. salicided block edge to at least one or nearest contact (CA) |
0.22 |
COHVNESD.7(a) |
Min. salicided block edge to contact (CA) |
0.15 |
