Specifications For 180MCUΒΆ GlobalFoundries Singapore PTE LTD Electrical Parameters Specification For 0.18um 3.3v/6v High Volage Process 1.0 Low Voltage Devices (3.3V) 2.0 Medium Voltage Devices (6V) 3.0 Medium Voltage Devices (5V) 4.0 Native Vt transistor (6V) 5.0 General Specification (Resistor, Capacitor, Oxide, Junction and Parasitic NPN/PNP) 5.1 Sheet Resistance 5.2 Contact Resistance 5.3 Gate oxide capacitance 5.4 Oxide Breakdown Voltage 5.5 Junction Breakdown Voltage 5.6 Parasitic Capacitance 5.7 Temperature Coefficient 5.8 Vertical BJT Transistors 6.0 Optional Passive Elements 6.1A 1000 ohm/sq High Poly Resistor 6.1B 2000 ohm/sq High Poly Resistor 6.1C 3000 ohm/sq High Poly Resistor 6.2 MIM Capacitor 7.0 SAB Devices 7.1A 3.3V NMOS SAB 7.1B 3.3V PMOS SAB 7.2A 5V NMOS SAB 7.2B 5V PMOS SAB 7.3A 6V NMOS SAB 7.3B 6V PMOS SAB 8.0 High Voltage LDMOS Transistor (10.0V) 8.1 High Voltage LDNMOS Transistor (10.0V) 8.2 High Voltage LDPMOS Transistor (10.0V)