8.1 High Voltage LDNMOS Transistor (10.0V)¶
# |
PARAMETERS |
XTORS |
DIMENSIONS |
MIN |
TYP |
MAX |
UNITS |
1 |
THRESHOLD VOLTAGE |
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Vtlin (Vds=0.05V, @ID=0.1*(W/L) uA) |
LDNMOS |
W/L = 25/0.6 |
0.71 |
0.84 |
0.97 |
V |
|
2 |
SATURATION CURRENT |
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Idsat (| Vgs | = 6V, | Vds | = 10V) |
LDNMOS |
W/L = 25/0.6 |
444 |
535 |
626 |
μA/um |
|
3 |
LINEAR CURRENT |
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Idlin (| Vgs | = 6V , | Vds | = 0.1V) |
LDNMOS |
W/L = 25/0.6 |
20.1 |
26.8 |
33.5 |
μA/μm |
|
4 |
SUBTHRESHOLD CURRENT |
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Ioff (| Vds | = 11V @ 25°C) |
LDNMOS |
W/L = 25/0.6 |
– |
0.1 |
20 |
pA/μm |
|
PUNCH-THROUGH VOLTAGE |
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5 |
BVDSS |
LDNMOS |
W/L = 25/0.6 |
13.2 |
14.5 |
– |
V |