1.0 Low Voltage Devices (3.3V)¶
#
PARAMETERS
XTORS
DIMENSIONS / COMMENTS
MIN
TYP
MAX
UNITS
1
Linear Threshold Voltage
VT0
NCH (NE2)
W/L = 10/0.28 (THIN GATE)
0.53
0.63
0.73
V
VT0
PCH (PE2)
W/L = 10/0.28 (THIN GATE)
-0.85
-0.73
-0.61
V
2
Saturation Current
Idsat ( | Vds | = | Vgs | = 3.3V)
NCH (NE2)
W/L = 10/0.28 (THIN GATE)
430
510
590
μA/um
Idsat ( | Vds | = | Vgs | = 3.3V)
PCH (PE2)
W/L = 10/0.28 (THIN GATE)
-290
-250
-210
μA/um
3
Subthreshold Current
Ioff ( | Vds | = 3.63V @ 25°C)
NCH (NE2)
W/L = 10/0.28 (THIN GATE)
–
1
100
pA/μm
Ioff ( | Vds | = 3.63V @ 25°C)
PCH (PE2)
W/L = 10/0.28 (THIN GATE)
-20
-1
–
pA/μm
4
Subthreshold Slope
SubVt Slope
NCH (NE2)
W/L = 10/0.28 (THIN GATE)
–
–
150
mV/dec
SubVt Slope
PCH (PE2)
W/L = 10/0.28 (THIN GATE)
–
–
150
mV/dec
5
Punch-Through Voltage
BVDSS
NCH (NE2)
W/L = 10/0.28 (THIN GATE)
7
9
–
V
BVDSS
PCH (PE2)
W/L = 10/0.28 (THIN GATE)
–
-8.5
-6.5
V
6
Field Assisted Breakdown
Voltage
BVDSF
NCH (NE2)
W/L = 210/0.28 (THIN GATE)
6.5
8.5
–
V
BVDSF
PCH (PE2)
W/L = 210/0.28 (THIN GATE)
–
-8.5
-6.5
V
7
Field Transistor Threshold
Voltage
Vtsat FN-Poly
NCH (NE2)
W/L = 210/0.28 (THIN GATE)
6.5
8.5
–
V
Vtsat FP-Poly
PCH (PE2)
W/L = 210/0.28 (THIN GATE)
–
-8.5
-6.5
V