1.0 Low Voltage Devices (3.3V)

#

PARAMETERS

XTORS

DIMENSIONS / COMMENTS

MIN

TYP

MAX

UNITS

1

Linear Threshold Voltage

VT0

NCH (NE2)

W/L = 10/0.28 (THIN GATE)

0.53

0.63

0.73

V

VT0

PCH (PE2)

W/L = 10/0.28 (THIN GATE)

-0.85

-0.73

-0.61

V

2

Saturation Current

Idsat ( | Vds | = | Vgs | = 3.3V)

NCH (NE2)

W/L = 10/0.28 (THIN GATE)

430

510

590

μA/um

Idsat ( | Vds | = | Vgs | = 3.3V)

PCH (PE2)

W/L = 10/0.28 (THIN GATE)

-290

-250

-210

μA/um

3

Subthreshold Current

Ioff ( | Vds | = 3.63V @ 25°C)

NCH (NE2)

W/L = 10/0.28 (THIN GATE)

1

100

pA/μm

Ioff ( | Vds | = 3.63V @ 25°C)

PCH (PE2)

W/L = 10/0.28 (THIN GATE)

-20

-1

pA/μm

4

Subthreshold Slope

SubVt Slope

NCH (NE2)

W/L = 10/0.28 (THIN GATE)

150

mV/dec

SubVt Slope

PCH (PE2)

W/L = 10/0.28 (THIN GATE)

150

mV/dec

5

Punch-Through Voltage

BVDSS

NCH (NE2)

W/L = 10/0.28 (THIN GATE)

7

9

V

BVDSS

PCH (PE2)

W/L = 10/0.28 (THIN GATE)

-8.5

-6.5

V

6

Field Assisted Breakdown

Voltage

BVDSF

NCH (NE2)

W/L = 210/0.28 (THIN GATE)

6.5

8.5

V

BVDSF

PCH (PE2)

W/L = 210/0.28 (THIN GATE)

-8.5

-6.5

V

7

Field Transistor Threshold

Voltage

Vtsat FN-Poly

NCH (NE2)

W/L = 210/0.28 (THIN GATE)

6.5

8.5

V

Vtsat FP-Poly

PCH (PE2)

W/L = 210/0.28 (THIN GATE)

-8.5

-6.5

V