1.0 Introduction

This document serves as the data sheet for GlobalFoundries 0.18µm Green (5.0V) Process 5V Wide-Range Inline non-CUP GPIO Library. This I/O cell library consists of bidirectional and input only I/O pad cells; analogue signal pad cells; I/O supply and ground pad cells; core supply and ground pad cells; corner, filler and breaker pad cells.

1.1 Cell List

Cell Type	Cell Name	Description
Bidirectional	gf180mcu_fd_io__bi_t	5V WR bidirectional pad with programmable drive strength of 4mA, 8mA, 12mA and 16mA tri-state output buffer, fast/slow slew rate control, pull- up/down and selectable CMOS/Schmitt input.
	gf180mcu_fd_io__bi_24t	5V WR bidirectional pad with 24mA drive strength tri- state output buffer, fast/slow slew rate control, pull- up/down and selectable CMOS/Schmitt input.
Input	gf180mcu_fd_io__in_c	5V WR CMOS input only pad with pull-up/down
	gf180mcu_fd_io__in_s	5V WR Schmitt Trigger input only pad with pull- up/down
Analog	gf180mcu_fd_io__asig_5p0	5V WR analogue signal pad with double diode protection (DC current carrying capability 10mA)
Power Supply	gf180mcu_fd_io__dvdd	Power supply cell (DC current carrying capability 60mA)
	gf180mcu_fd_io__dvss	Ground cell (DC current carrying capability 60mA)
Corner	gf180mcu_fd_io__cor	Corner cell
Filler	gf180mcu_fd_io__fillnc *	Filler for gap width less than 1μm
	gf180mcu_fd_io__fill1	1μm filler
	gf180mcu_fd_io__fill5	5μm filler
	gf180mcu_fd_io__fill10	10μm filler
Breaker	gf180mcu_fd_io__brk2	2μm Breaker with VSS
	gf180mcu_fd_io__brk5	5μm Breaker with VSS

Note

gf180mcu_fd_io__fillnc can’t be used as a standalone cell and it must be used with gf180mcu_fd_io__filln (n>=2).

1.2 Device List

nmos_6p0, pmos_6p0, pn_6p0, np_6p0, ppolyf_u, nmoscap_6p0, nmos_6p0_sab, pmos_6p0_sab.

1.3 Design Manual

This design is based on Design Manual