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GlobalFoundries GF180MCU PDK 2.0 MOSFET Models
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    • FAB3E Spice Model For 0.18um 3.3v/6v High Voltage MCU Process
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          • 1.0 Introduction
            • 2.1 MOSFET Model Extraction
            • 2.2 Model Features and Limitations
            • 2.3 1/f Noise Measurement conditions
            • 2.4 MOSFET Fixed Corner Models
            • 2.5 Model vs. EP Nominal Target
            • 2.6 How to Use the Models
          • 3.0 Diode Models
          • 4.0 Resistor Models
          • 5.0 BJT Models
          • 6.0 MOSCAP Capacitor Models
          • 7.0 MIM Capacitor Models
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          • 9.0 Statistical Model Reference guide
        • FAB3E Spice Model For 0.18um 10v High Voltage MCU Process
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    2.0 MOSFET ModelsΒΆ

    • 2.1 MOSFET Model Extraction
    • 2.2 Model Features and Limitations
      • 2.2.1 LV NMOS and LV PMOS (3.3V)
    • 2.3 1/f Noise Measurement conditions
    • 2.4 MOSFET Fixed Corner Models
      • 2.4.1 Fixed Corner Methodology
      • 2.4.2 Corner Model Definitions
    • 2.5 Model vs. EP Nominal Target
      • 2.5.1 nfet_03v3 and pfet_03v3 (3.3V)
      • 2.5.2 NMOS 3p3 SAB PMOS 3p3 SAB
      • 2.5.3 nfet_06v0 and pfet_06v0 (6V)
      • 2.5.4 nfet_06v0 and pfet_06v0 (5V)
    • 2.6 How to Use the Models
      • 2.6.1 For NGSPICE Users
      • 2.6.2 For XYCE Users
    Previous 1.5.5 MIM Capacitor Instance parameters
    Next 2.1 MOSFET Model Extraction
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