3.0 Diode Models¶
3.1 Model description and limitation¶
Temperature characteristics are measured form -40 to 125 C for IV and CV it is taken @ 25C and 125C.The diodes are modeled with Level 3 diode model. The forward bias behavior and the reverse breakdown behavior are modeled for different temperatures.
Schottky Diode Breakdown Temperature dependence is not modelled.
Diode |
CV Measurement |
IV Measurement |
||
Area(um^2) |
Perimeter(um) |
Area(um^2) Perimeter(um) |
||
3.3V N+/Psub Area diode |
80000 |
1140 |
1600 |
160 |
3.3V N+/Psub Peri diode |
50000 |
25400 |
1600 |
3280 |
3.3V P+/Nwell Area diode |
80000 |
1140 |
1600 |
160 |
3.3V P+/Nwell Peri diode |
50000 |
25400 |
1600 |
3280 |
6V N+/Psub Area diode |
80000 |
1140 |
1600 |
160 |
6V N+/Psub Peri diode |
50000 |
25400 |
1600 |
3280 |
6V P+/Nwell Area diode |
80000 |
1140 |
1600 |
160 |
6V P+/Nwell Peri diode |
50000 |
25400 |
1600 |
3280 |
Pwell/Dnwell Area diode |
10000 |
400 |
100 |
40 |
Pwell/Dnwell Peri diode |
1750 |
5070 |
2000 |
2080 |
Dnwell/Psub Area diode |
10000 |
400 |
100 |
40 |
Dnwell/Psub Peri diode |
4250 |
5170 |
5000 |
2200 |
Schottky Diode/ Area diode |
Wf/L=0.62u/20u Nf=4 |
Wf/L=0.62u/20u Nf=4 |
3.2 Model vs EP Nominal Target¶
EP Specification |
Measurement |
||||||
Device (W/L/m) |
Model |
BV (V) |
I_leak (nA/um^2) |
Von (V) |
BV |
I_leak (V) (nA/um^2) |
Von (V) |
sc_diode (W/L/m) =(0.62u/20u/4) |
Min |
-10 |
- |
0.22 |
- |
- |
- |
Typ |
-17 |
35 |
0.32 |
-17.6 |
31 |
0.32 |
|
Max |
- |
200 |
0.42 |
- |
- |
- |
Bias Conditions:
Von: @Forward current=1uA/um^2
Reverse Breakdown: @Reverse current =10uA/um^2
Reverse Leakage current: @Reverse voltage=6.6V
3.3 How to Use the Models¶
3.3.1 For NGSPICE Users¶
To be added
3.3.2 For XYCE Users¶
To be added