1.5.1 MOSFET Instance parameters¶
The MOSFET instance parameters shall be used in the netlist are described below with their default values: -
Parameter |
Description |
w |
Device width in meter |
l |
Device length in meter |
nf |
Number of PC (gate) fingers |
as |
Source diffusion area in meter^2 |
ad |
Drain diffusion area in meter^2 |
ps |
Source diffusion perimeter in meter |
pd |
Drain diffusion perimeter in meter |
nrs |
Number of squares in source |
nrd |
Number of squares in drain |
1.5.1.1 LV NMOS (3.3V) and LV PMOS (3.3V) & NMOS SAB (3.3V) and PMOS SAB (3.3V)¶
Model Name & (BSIM Version) |
Parameter Value |
W |
L |
nf |
as |
ad |
ps |
pd |
nrs |
nrd |
dtemp |
nfet_03v3 (BSIM 4.5) |
Min |
0.22 |
0.28 |
1 |
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Max |
100 |
50 |
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Default |
0 |
0 |
1 |
0 |
0 |
0 |
0 |
0 |
0 |
0 |
|
pfet_03v3 (BSIM 4.5) |
Min |
0.22 |
0.28 |
1 |
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Max |
50 |
100 |
|||||||||
Default |
0 |
0 |
1 |
0 |
0 |
0 |
0 |
0 |
0 |
0 |
1.5.1.2 MV NMOS (5V/6V), MV PMOS (5V/6V), NMOS SAB (5V/6V), PMOS SAB (5V/6V) and native NMOS (6V)¶
Model Name & (BSIM Version) |
Parameter Value |
W |
L |
nf |
as |
ad |
ps |
pd |
nrs |
nrd |
dtemp |
nfet_06v0 (BSIM 4.5) |
Min |
0.3 |
0.6 |
1 |
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Max |
100 |
50 |
|||||||||
Default |
0 |
0 |
1 |
0 |
0 |
0 |
0 |
0 |
0 |
0 |
|
pfet_06v0 (BSIM 4.5) |
Min |
0.3 |
0.5 |
1 |
|||||||
Max |
100 |
50 |
|||||||||
Default |
0 |
0 |
1 |
0 |
0 |
0 |
0 |
0 |
0 |
0 |
|
nfet_06v0_nvt (BSIM 4.6) |
Min |
0.8 |
1.8 |
1 |
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Max |
100 |
50 |
|||||||||
Default |
0 |
0 |
1 |
0 |
0 |
0 |
0 |
0 |
0 |
0 |