2.5 Model vs. EP Nominal Target¶
In the following sections, the comparison of the key device parameters between the models and EP targets are listed for each device. The values are for temperature at 25 C unless specified otherwise.
2.5.1 10V LDNMOS & LDPMOS¶
EP Specification |
Measurement |
||||
Device (W/L) |
Model |
Idsat (uA/um) |
Vtlin |
Idsat (uA/um) |
Vtlin (V) |
nfet_10v0_asym
|
slow |
444 |
0.97 |
- |
- |
typical |
535 |
0.84 |
543 |
0.83 |
|
fast |
626 |
0.71 |
- |
- |
|
pfet_10v0_asym
|
slow |
-200 |
-0.88 |
- |
- |
typical |
-260 |
-1.02 |
-268 |
-1.02 |
|
fast |
-320 |
-1.16 |
- |
- |
Conditions:
Conditions |
Idsat |
Vtlin |
10V LDNMOS |
Vds = 10V, Vgs = 6V |
Vds = 0.05V @Id=0.1*(W/L) uA |
10V LDPMOS |
Vds = -10V, Vgs = -6V |
Vds = -0.05V @Id=-0.1*(W/L) uA |