4.0 Statistical Models

Uncertainties are inherent in the fabrication of transistors. The same transistor design can show different performance when fabricated using different equipment, at different locations, or during different times. In order to capture these variations of performance, a statistical model is necessary.

The following table lists statistical models that are available in this release.

List of Available Statistical Models

MOSFET Model	Both Local and Global	Description
nfet_10v0_asym	global only	Statistical BSIM4 model for Asym 10 V LDNMOS
pfet_10v0_asym	global only	Statistical BSIM4 model for Asym 10V LDPMOS

Note

* All MOSFET global statistical models are EP target based model

• 4.1 Statistical Models Syntax & Usage
  • 4.1.1 General Syntax
  • 4.1.2 Parameter switches
  • 4.1.3 MC skew limit parameter
• 4.2 Global Statistical Modeling Results
  • 4.2.1 Isolated 10V LDMOS Process MC